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NTE126 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE126 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE126 Germanium Mesa Transistor, PNP, for High–Speed Switching Applications Maximum Ratings: Collector–Emitter Voltage, VCE 15Vdc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage, VCB 15Vdc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEB 2.5Vdc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Dissipation (TA = +25°C), PD 150mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate above 25 °C 2.0mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Dissipation (TC = +25°C), PD 300mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate above 25 °C 4.0mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –65 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Junction Temperature Range, Tstg –65 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Min Max Unit Collector–Base Breakdown Voltage (IC = 100µAdc, IE = 0) BVCBO 15 – Vdc Emitter–Base Breakdown Voltage (IE = 100µAdc, IC = 0) BVEBO 2.5 – Vdc Collector–Latch–Up Voltage (VCC = 11.5 Vdc) LVCEX 11.5 – Vdc Collector–Emitter Cutoff Current (VCE = 15Vdc) ICES – 100 µAdc Collector–Base Cutoff Current (VCB = 6Vdc, IE = 0) ICBO – 3.0 µAdc DC Current Gain (IC = 10mAdc, VCE = 0.3Vdc) (IC = 50mAdc, VCE = 1Vdc) (IC = 100mAdc, VCE = 1Vdc) hFE 40 40 40 – – – – Collector–Emitter Saturation Voltage (IC = 10mAdc, IB = 1mAdc) (IC = 50mAdc, IB = 5mAdc) (IC = 100mAdc, IB = 10mAdc) VCE(sat) – – – 0.18 0.35 0.60 Vdc |
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