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ESD7371 Datasheet(PDF) 1 Page - ON Semiconductor |
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ESD7371 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 Publication Order Number: ESD7371/D ESD7371, SZESD7371 Series Ultra-Low Capacitance ESD Protection The ESD7371 Series is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. Features • Industry Leading Capacitance Linearity Over Voltage • Low Capacitance (0.7 pF Max, I/O to GND) • Stand−off Voltage: 5.3 V • Low Leakage: < 1 nA • Low Dynamic Resistance < 1 W • IEC61000−4−2 Level 4 ESD Protection • 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • RF Signal ESD Protection • RF Switching, PA, and Antenna ESD Protection • Near Field Communications • USB 2.0, USB 3.0 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit IEC 61000−4−2 (ESD) (Note 1) 20 kV IEC 61000−4−5 (ESD) (Note 2) 3.0 A Total Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction−to−Ambient °PD° RqJA 300 400 mW °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform. 2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. 3. Mounted with recommended minimum pad size, DC board FR−4 See Application Note AND8308/D for further description of survivability specs. MARKING DIAGRAMS PIN CONFIGURATION AND SCHEMATIC http://onsemi.com X, XX = Specific Device Code M = Date Code 1 Cathode 2 Anode SOD−323 CASE 477 SOD−523 CASE 502 SOD−923 CASE 514AB 1 2 AG M 1 2 AG 12 AE M See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION |
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