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ESD7371 Datasheet(PDF) 1 Page - ON Semiconductor

Part # ESD7371
Description  Ultra-Low Capacitance ESD Protection
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESD7371 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
ESD7371/D
ESD7371,
SZESD7371 Series
Ultra-Low Capacitance ESD
Protection
The ESD7371 Series is designed to protect voltage sensitive
components that require ultra−low capacitance from ESD and
transient voltage events. Excellent clamping capability, low
capacitance, high breakdown voltage, high linearity, low leakage, and
fast response time make these parts ideal for ESD protection on
designs where board space is at a premium. It has industry leading
capacitance linearity over voltage making it ideal for RF applications.
This capacitance linearity combined with the extremely small package
and low insertion loss makes this part well suited for use in antenna
line applications for wireless handsets and terminals.
Features
Industry Leading Capacitance Linearity Over Voltage
Low Capacitance (0.7 pF Max, I/O to GND)
Stand−off Voltage: 5.3 V
Low Leakage: < 1 nA
Low Dynamic Resistance < 1 W
IEC61000−4−2 Level 4 ESD Protection
1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
RF Signal ESD Protection
RF Switching, PA, and Antenna ESD Protection
Near Field Communications
USB 2.0, USB 3.0
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD) (Note 1)
20
kV
IEC 61000−4−5 (ESD) (Note 2)
3.0
A
Total Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
°PD°
RqJA
300
400
mW
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to
+150
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−2 waveform.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
3. Mounted with recommended minimum pad size, DC board FR−4
See Application Note AND8308/D for further description of survivability specs.
MARKING
DIAGRAMS
PIN CONFIGURATION
AND SCHEMATIC
http://onsemi.com
X, XX
= Specific Device Code
M
= Date Code
1
Cathode
2
Anode
SOD−323
CASE 477
SOD−523
CASE 502
SOD−923
CASE 514AB
1
2
AG
M
1
2
AG
12
AE M
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION


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