© Semiconductor Components Industries, LLC, 2004

December, 2004 − Rev. 4

1

Publication Order Number:

NTD80N02/D

NTD80N02

Power MOSFET

24 V, 80 A, N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

Typical Applications

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

24

Vdc

Gate−to−Source Voltage − Continuous

±20

Vdc

80*

200

Adc

75

Watts

Operating and Storage

Temperature Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

733

mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

1.65

67

120

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using 1

″ pad size,

2. When surface mounted to an FR4 board using the minimum recommended

*Chip current capability limited by package.

Y

= Year

WW

= Work Week

80N02

= Device Code

3

Source

2

Drain

4

Drain

1

Gate

3

Source

2

Drain

4

Drain

1

Gate

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

CASE 369AA

DPAK

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENTS

1

2

3

4

1 2

3

4

CASE 369D

DPAK

(Straight Lead)

STYLE 2

24 V

5.0 m

W

80 A

N−Channel

D

S

G

1 2

3

4

CASE 369C

DPAK

(Surface Mount)

STYLE 2