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RJK0635DSP Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0635DSP Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 9 page R07DS1345EJ0301 Rev.3.01 Page 1 of 7 Nov. 24, 2016 Preliminary Datasheet RJK0635DSP 60V, 3.5A, 98m max. N Channel Power MOS FET Power Switching Features Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Outline 1 2 3 4 5 6 7 8 G D S D G D S D MOS1 MOS2 1 2 78 4 5 6 3 1, 3 Sourc 2, 4 Gate 5, 6, 7, 8 Drain RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±12 V Drain current ID 3.5 A Drain peak current ID(pulse)Note1 14 A Body-drain diode reverse drain current IDR 3.5 A Avalanche current IAP Note 2 3.5 A Avalanche energy EAS Note 2 1.05 mJ Channel dissipation Pch Note3 1.2 W Channel dissipation Pch Note4 1.8 W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25°C, Rg 50 3. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 4. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s R07DS1345EJ0301 Rev.3.01 Nov.24.2016 |
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