R07DS1345EJ0301 Rev.3.01

Page 1 of 7

Nov. 24, 2016

RJK0635DSP

60V, 3.5A, 98m max.

N Channel Power MOS FET

Power Switching

Features

 Capable of 2.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

 Pb-free

Outline

1 2

3

4

5

6

7

8

G

D

S

D

G

D

S

D

MOS1

MOS2

1

2

78

4

5 6

3

1, 3

Sourc

2, 4

Gate

5, 6, 7, 8 Drain

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

60

V

Gate to source voltage

±12

V

Drain current

3.5

A

Drain peak current

14

A

Body-drain diode reverse drain current

3.5

A

Avalanche current

3.5

A

Avalanche energy

1.05

mJ

Channel dissipation

1.2

W

Channel dissipation

1.8

W

Channel temperature

Tch

150



C

Storage temperature

Tstg

–55 to +150



C

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25°C, Rg  50 

3. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s

4. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s

R07DS1345EJ0301

Rev.3.01

Nov.24.2016