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RJH60D7BDPQ-E0 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # RJH60D7BDPQ-E0
Description  600V - 50A - IGBT
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60D7BDPQ-E0 Datasheet(HTML) 6 Page - Renesas Technology Corp

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RJH60D7BDPQ-E0
Preliminary
R07DS0795EJ0300 Rev.3.00
Page 6 of 9
Jul 20, 2016
10
100
1000
10000
0
100
50
150
200
250
300
Cies
Coes
Cres
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0 V
f = 1 MHz
Tc = 25°C
Collector to Emitter Voltage VCE (V)
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
100
80
120
60
40
20
0
0123
4
Tc = 150°C
25°C
VCE = 0 V
Pulse Test
Diode Current Slope di/dt (A/
μs)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
100
50
300
250
200
150
0
040
80
200
120
160
040
80
200
120
160
VCC = 300 V
IF = 50 A
Tc = 150°C
25°C
Diode Current Slope di/dt (A/
μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di/dt (A/
μs)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
12
8
4
16
0
VCC = 300 V
IF = 50 A
Tc = 150°C
25°C
C-E Diode Forward Voltage VCEF (V)
Forward Current vs. Forward Voltage (Typical)
040
80
200
120
160
0.2
0.1
0.5
0.4
0.3
0
VCC = 300 V
IF = 50 A
Tc = 150°C
25°C
800
600
400
200
0
0
16
12
8
4
0
40
80
120
160
200
VGE
VCE
VCE = 300 V
IC = 50 A
Tc = 25°C


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