HAF1010RJ

Target Specifications

R07DS1361EJ0200 Rev.2.00

Page 2 of 6

Sep 06, 2016

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

–3.5

—

—

V

—

—

–1.2

V

Input current

(Gate non shut down)

—

—

–100

A

—

—

–50

A

—

—

–1

A

Input current

(Gate shut down)

—

–0.8

—

mA

—

–0.35

—

mA

Shut down temperature

Tsd

—

175

—

C

Cannel temperature

Gate operation voltage

Vop

–3.5

—

–12

V

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

–1.5

—

—

A

Drain current

—

—

–10

mA

Drain to source breakdown voltage

–60

—

—

V

Gate to source breakdown voltage

–16

—

—

V

Gate to source breakdown voltage

2.5

—

—

V

Gate to source leak current

—

—

–100

A

—

—

–50

A

—

—

–1

A

—

—

100

A

Input current (shut down)

—

–0.8

—

mA

—

–0.35

—

mA

Zero gate voltage drain current

—

—

–10

A

Gate to source cut off voltage

–1.1

—

–2.25

V

Forward transfer admittance

2

4

—

S

Static drain to source on state

resistance

—

200

340

m



—

140

200

m



Output capacitance

Coss

—

326

―

pF

f = 1 MHz

Turn-on delay time

td(on)

—

2

―

s

12



Rise time

tr

—

7.6

—

s

Turn off delay time

td(off)

—

3.2

―

s

Fall time

tf

—

3.2

—

s

Body-drain diode forward voltage

—

–0.9

—

V

Body-drain diode reverse recovery

time

trr

—

77

—

ns

diF/dt = 50 A/

s

Over lord shut down

—

4.4

—

ms

—

2

—

ms

Notes: 3. Pulse test

4. Including the junction temperature rise of the lorded condition