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RMPA0913C-58 Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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RMPA0913C-58 Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 6 page Raytheon RF Components 362 Lowell Street Andover, MA 01810 Revised March 30, 2000 Page 3 www.raytheon.com/micro Characteristic performance data and specifications are subject to change without notice. PRODUCT INFORMATION CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1,VD2) ARE PRESENT MAY DAMAGE THE AMPLIFIER. The following sequence must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for the ground of the DC supplies. Slowly apply gate supply voltages of -3.0 V to the board terminals Vgg1, Vgg2 to pinch-off the two stages. Step 3: Slowly apply drain supply voltage of +3.5 V to the board terminals Vdd. Step 4: Adjust the gate supply voltages Vgg1, Vgg2 to the values shown on the data summary supplied with the sample. (First adjust Vgg2 to set Idq2. Then adjust Vgg1 to set Iddq=Idq1+Idq2. These gate voltages need not be changed. However, Vgg1,Vgg2 may be adjusted only when different quiescent bias currents are desired for performance trade-off evaluation). Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Adjust RF input signal power level as required. Step 6: Follow turn-off sequence of: (i) Turn off RF Input Power (ii) Turn down and off drain voltage Vdd. (iii) Turn down and off gate voltages Vgg1, Vgg2. Test Procedure for the evaluation board (RMPA0913C-58) Figure 3 Schematic for a Typical Test Evaluation Board Evaluation Board Schematic Ver.6, 4/28/98 Board Type: Multi Layer FR4 Signal to Ground Separation: 0.016” RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier |
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