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NP60N06PLK Datasheet(PDF) 6 Page - Renesas Technology Corp |
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NP60N06PLK Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 9 page NP60N06PLK R07DS1338EJ0100 Rev.1.00 Page 6 of 7 Apr 8, 2016 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 5 10 15 -100 -50 0 50 100 150 200 Pulsed VGS=4.5V ID=15A VGS=10V ID=30A Tch - Channel Temperature - °C 10 100 1000 10000 0.01 0.1 1 10 100 VGS = 0V f = 1.0MHz Crss Ciss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 1 10 100 1000 0.1 1 10 100 VDD = 30V VGS=10V RG=0Ω td(on) tr td(off) tf ID - Drain Current - A 0 2 4 6 8 10 0 10 20 30 40 50 0 5 10 15 20 25 30 35 40 VDD= 48V 30V 12V ID=60A VDS VGS QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 Pulsed VGS=10V 0V 4.5V VF(S-D) - Source to Drain Voltage - V 1 10 100 0.1 1 10 100 di/dt = 100A/μs VGS = 0V IF - Drain Current - A |
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