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NP60N06PLK Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # NP60N06PLK
Description  60 V ??60 A ??N-channel Power MOS FET
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP60N06PLK Datasheet(HTML) 6 Page - Renesas Technology Corp

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NP60N06PLK
R07DS1338EJ0100 Rev.1.00
Page 6 of 7
Apr 8, 2016
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
5
10
15
-100
-50
0
50
100
150
200
Pulsed
VGS=4.5V
ID=15A
VGS=10V
ID=30A
Tch - Channel Temperature - °C
10
100
1000
10000
0.01
0.1
1
10
100
VGS = 0V
f = 1.0MHz
Crss
Ciss
Coss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1
10
100
1000
0.1
1
10
100
VDD = 30V
VGS=10V
RG=0Ω
td(on)
tr
td(off)
tf
ID - Drain Current - A
0
2
4
6
8
10
0
10
20
30
40
50
0
5
10
15
20
25
30
35
40
VDD= 48V
30V
12V
ID=60A
VDS
VGS
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
Pulsed
VGS=10V
0V
4.5V
VF(S-D) - Source to Drain Voltage - V
1
10
100
0.1
1
10
100
di/dt = 100A/μs
VGS = 0V
IF - Drain Current - A


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