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RN1442 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN1442 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page RN1441 ~RN1444 2001-06-07 2 Electrical Characteristics (Ta = 25 °°°°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-off current ICBO ― VCB = 50V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO ― VEB = 25V, IC = 0 ― ― 0.1 µA DC current gain hFE (Note) ― VCE = 2V, IC = 4mA 200 ― 1200 Collector-emitter saturation voltage VCE (sat) ― IC = 30mA, IB = 3mA ― ― 0.1 V Transition frequency fT ― VCE = 6V, IC = 4mA ― 30 ― MHz Collector output capacitance Cob ― VCB = 10V, IE = 0, f = 1MHz ― 4.8 ― pF RN1441 3.9 5.6 7.3 RN1442 7 10 13 RN1443 15.4 22 28.6 Input resistor RN1444 R1 ― ― 1.54 2.2 2.86 kΩ Note : hFE classification A: 200~700 B: 350~1200 |
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