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SF25GZ51 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # SF25GZ51
Description  MEDIUM POWER CONTROL APPLICATIONS
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SF25GZ51 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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SF25GZ51,SF25JZ51
2001-05-10
2
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
IDRM
IRRM
VDRM = VRRM = Rated
―
―
20
µA
Peak On−State Voltage
VTM
ITM = 80 A
―
―
1.5
V
Gate Trigger Voltage
VGT
―
―
1.5
V
Gate Trigger Current
IGT
VD = 6 V, RL = 10 Ω
―
―
20
mA
Holding Current
IH
VD = 6 V, ITM = 500 mA
―
―
100
mA
Critical Rate of Rise of Off−State Voltage
dv / dt
VDRM = Rated, Tc = 125°C
Exponential Rise
―
50
―
V / µs
Thermal Resistance
Rth (j−c)
Junction to Case
―
―
1.3
°C / W
MARKING
NUMBER
SYMBOL
MARK
SF25GZ51
F25GZ51
*1
TYPE
SF25JZ51
F25JZ51
*2
Example
8A : January 1998
8B : February 1998
8L : December 1998


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