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SM3GZ47 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SM3GZ47 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM3GZ47,SM3JZ47 2001-07-13 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM3GZ47,SM3JZ47 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S ON−State Current : IT (RMS) = 3A l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SM3GZ47 400 Repetitive Peak Off−State Voltage SM3JZ47 VDRM 600 V R.M.S On−State Current (Full Sine Waveform Tc = 110°C) IT (RMS) 3 A 30 (50Hz) Peak One Cycle Surge On−State Current (Non-Repetitive) ITSM 33 (60Hz) A I 2 t Limit Value (t = 1~10ms) I 2 t 4.5 A 2 s Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Isolation Voltage (AC, t = 1min.) VISOL 1500 V Unit: mm JEDEC ― JEITA ― TOSHIBA 13−10H1A Weight: 1.7g Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 4.5A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 |
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Similar Description - SM3GZ47 |
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