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TC55VBM316ASTN55 Datasheet(PDF) 11 Page - Toshiba Semiconductor |
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TC55VBM316ASTN55 Datasheet(HTML) 11 Page - Toshiba Semiconductor |
11 / 15 page TC55VBM316AFTN/ASTN40,55 2002-08-05 11/15 DATA RETENTION CHARACTERISTICS (Ta ==== −−−−40° to 85°C) SYMBOL PARAMETER MIN TYP MAX UNIT VDH Data Retention Supply Voltage 1.5 3.6 V VDH = 3.6 V Ta = −40~85°C 10 Ta = −40~40°C 2 IDDS2 Standby Current VDH = 3.0 V Ta = −40~85°C 5 µA tCDR Chip Deselect to Data Retention Mode Time 0 ns tR Recovery Time 5 ms CONTROLLED DATA RETENTION MODE (See Note 1) CE2 CONTROLLED DATA RETENTION MODE (See Note 3) , CONTROLLED DATA RETENTION MODE (See Note 4) VDD 2.3 V GND VIL DATA RETENTION MODE tR tCDR VDD 0.2 V VIH CE2 CE1 VDD 2.3 V GND VIH DATA RETENTION MODE tR (See Note 2) (See Note 2) tCDR VDD VDD − 0.2 V 1 CE UB LB VDD 2.3 V GND VIH DATA RETENTION MODE tR (See Note 5) (See Note 5) tCDR VDD VDD − 0.2 V UB , LB |
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