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ESD7331MUT5G Datasheet(PDF) 2 Page - ON Semiconductor |
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ESD7331MUT5G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page Bi−Directional TVS IPP IPP V I IR IT IT IR VRWM VC VBR VRWM VC VBR ESD7331 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM 3.3 V Breakdown Voltage (Note 2) VBR IT = 1 mA 4.0 V Reverse Leakage Current IR VRWM = 3.3 V 1.0 mA Clamping Voltage (Note 3) VC IPP = 1 A 7.5 V ESD Clamping Voltage VC Per IEC61000−4−2 See Figures 1 and 2 Junction Capacitance CJ VR = 0 V, f = 1 MHz 0.4 0.75 pF Dynamic Resistance RDYN TLP Pulse 0.26 W Insertion Loss f = 100 MHz f = 8.5 GHz 0.003 1.79 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. Figure 1. ESD Clamping Voltage Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Negative 8 kV Contact per IEC61000−4−2 TIME (ns) −20 0 20 40 60 80 100 120 140 160 −20 0 20 40 60 80 100 120 140 TIME (ns) −70 −60 −50 −40 −30 −20 −10 0 10 −20 0 20 40 60 80 100 120 140 |
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