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ESD7331MUT5G Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESD7331MUT5G
Description  ESD Protection Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESD7331MUT5G Datasheet(HTML) 2 Page - ON Semiconductor

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background image
Bi−Directional TVS
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
ESD7331
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
3.3
V
Breakdown Voltage (Note 2)
VBR
IT = 1 mA
4.0
V
Reverse Leakage Current
IR
VRWM = 3.3 V
1.0
mA
Clamping Voltage (Note 3)
VC
IPP = 1 A
7.5
V
ESD Clamping Voltage
VC
Per IEC61000−4−2
See Figures 1 and 2
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
0.4
0.75
pF
Dynamic Resistance
RDYN
TLP Pulse
0.26
W
Insertion Loss
f = 100 MHz
f = 8.5 GHz
0.003
1.79
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
Figure 1. ESD Clamping Voltage Positive 8 kV
Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Negative 8 kV
Contact per IEC61000−4−2
TIME (ns)
−20
0
20
40
60
80
100
120
140
160
−20
0
20
40
60
80
100
120
140
TIME (ns)
−70
−60
−50
−40
−30
−20
−10
0
10
−20
0
20
40
60
80
100
120
140


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