μPA2736GR

R07DS1320EJ0100 Rev.1.00

Page 6 of 6

Jan 25, 2016

Package Drawings (Unit: mm)

SOP-8

Equivalent Circuit

Source

Body

Diode

Gate

Drain

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Darin

P-SOP8-3.95

× 4.9-1.27

0.085g

MASS[Typ.]

FP-8DAV

PRSP0008DD-D

RENESAS Code

JEITA Package Code

Previous Code

8

5

1

4

Detail F

Terminal cross section

1.27

1.08

0.40

0.60

0.25

x

0.46

0.40

0.34

0.10

0.25

0.20

0.15

Max

Nom

Min

Dimension in Millimeters

Symbol

Reference

5.3

4.90

D

3.95

E

0.14

6.20

6.10

5.80

0.25

1.75

A

0.75

Z

L

8°

0°

c

1.27

e

0.1

y

D

x M

e

Z

(Ni/Pd/Au plating)

2.

1. DIMENSIONS "*1(Nom)" AND "*2"

DO NOT INCLUDE MOLD FLASH.

NOTE)

DIMENSION "*3" DOES NOT

INCLUDE TRIM OFFSET.

Index mark

L

Detail F

y

Package Name

SOP-8