UPA2738GR-E1-AX datasheet(3/7 Pages) RENESAS

Part #	UPA2738GR-E1-AX

Description	P-channel MOSFET

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

μPA2738GR

R07DS1321EJ0100 Rev.1.00

Page 3 of 6

Jan 25, 2016

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

FORWARD BIAS SAFE OPERATING AREA

0

20

40

60

80

100

120

140

0

25

50

75

100

125

150

175

TA - Ambient Temperature - °C

-0.01

-0.1

-1

-10

-100

-1000

-0.01

-0.1

-1

-10

-100

D

C

Single Pulse

TA = 25°C

Mounted on glass epoxy board of

25.4 mm x 25.4 mm x 0.8 mmt

PW

=

10

0

s

1

m

s

10 ms

30 ms

100 ms

ID(pulse) = –100 A

R

D

S(

on

)L

im

ite

d

(V

G

S

=

10

V)

Po

we

r D

iss

ipa

tio

n

Lim

ite

d

ID(DC) = –10 A

VDS - Drain to Source Voltage – V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.01

0.1

1

10

100

1000

Rth(ch-A) = 114°C/W

Rth(ch-A)：Mounted on glass epoxy board of

25.4 mm x 25.4 mm x 0.8 mmt

Single pulse

PW - Pulse Width - s

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

-0

-20

-40

-60

-80

-100

-0

-0.5

-1

-1.5

Pulsed

–4.5 V

VGS = –10 V

VDS - Drain to Source Voltage - V

-0.001

-0.01

-0.1

-1

-10

-100

-0

-1

-2

-3

-4

Pulsed

VDS = –10 V

TA = 150°C

75

°C

25

°C

–55

°C

VGS - Gate to Source Voltage - V

100

μ

1 m

10 m

100 m

1

10

100

1000

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UPA2738GR-E1-AX Datasheet(PDF) 3 Page - Renesas Technology Corp

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