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UTC2SA1020 Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UTC2SA1020
Description  PNP EPITAXIAL SILICON TRANSISTOR
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTC2SA1020 Datasheet(HTML) 3 Page - Unisonic Technologies

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UTC2SA1020
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
3
QW-R208-021,A
I(tot)
mA
-0.4
Ic -VBE
0
-0.8
0
-1.2
-0.5
-1.0
-1.5
-2.0
Base Emitter Voltage VBE(V)
-1.6
I(tot)
mA
20
Pc-Ta
040
0
100
60
140 160
0.2
0.6
0.8
1.0
1.Mounted on Ceramic
Substrate (250mm2*0.8t)
2.Ta=25
℃
80
0.4
I(tot)
mA
-0.01
-0.03
VCE(sat)-Ic
-0.005
-0.03
-3
-0.01
Collector Current IC(A)
-0.05
-0.1
-0.3
-0.5
-0.1
-0.3
-1
-1
COMMON EMITTER
IC/IB=20
Ta=100
℃
25
℃
-55
℃
I(tot)
mA
-0.01
-0.3
VCE(sat)-Ic
-0.005
-0.03
-3
-0.1
Collector Current IC(A)
-0.5
-1
-3
-5
-0.1
-0.3
-1
-10
COMMON EMITTER
IC/IB=20
Ta=100
℃ 25℃
-55
℃
Ta=100
℃
25
℃
-55
℃
COMMON EMITTER
VCE=-2V
Ambient Temperature Ta
℃
120
1.2
1
2
-0.3
Safe Operation Area
-1
-0.1
-0.3
-3
-0.05
-0.5
-1
Collector Emitter Voltage VCE (V)
-3
-5
-10
-30
-100
Ic max.(pulsed)*
-0.03
-0.01
Ic max.(pulsed)*
10ms*
1ms*
100
ms
*
1s*
DC OPERATION
Ta=25
℃
*Single nonrepetitive pulse
Ta=25
℃
Curves must be derated
linearly with increase
in temperature
VCEO MAX


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