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UTC2SA1020 Datasheet(PDF) 3 Page - Unisonic Technologies |
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UTC2SA1020 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-021,A I(tot) mA -0.4 Ic -VBE 0 -0.8 0 -1.2 -0.5 -1.0 -1.5 -2.0 Base Emitter Voltage VBE(V) -1.6 I(tot) mA 20 Pc-Ta 040 0 100 60 140 160 0.2 0.6 0.8 1.0 1.Mounted on Ceramic Substrate (250mm2*0.8t) 2.Ta=25 ℃ 80 0.4 I(tot) mA -0.01 -0.03 VCE(sat)-Ic -0.005 -0.03 -3 -0.01 Collector Current IC(A) -0.05 -0.1 -0.3 -0.5 -0.1 -0.3 -1 -1 COMMON EMITTER IC/IB=20 Ta=100 ℃ 25 ℃ -55 ℃ I(tot) mA -0.01 -0.3 VCE(sat)-Ic -0.005 -0.03 -3 -0.1 Collector Current IC(A) -0.5 -1 -3 -5 -0.1 -0.3 -1 -10 COMMON EMITTER IC/IB=20 Ta=100 ℃ 25℃ -55 ℃ Ta=100 ℃ 25 ℃ -55 ℃ COMMON EMITTER VCE=-2V Ambient Temperature Ta ℃ 120 1.2 1 2 -0.3 Safe Operation Area -1 -0.1 -0.3 -3 -0.05 -0.5 -1 Collector Emitter Voltage VCE (V) -3 -5 -10 -30 -100 Ic max.(pulsed)* -0.03 -0.01 Ic max.(pulsed)* 10ms* 1ms* 100 ms * 1s* DC OPERATION Ta=25 ℃ *Single nonrepetitive pulse Ta=25 ℃ Curves must be derated linearly with increase in temperature VCEO MAX |
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