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UTC2SA1020 Datasheet(PDF) 1 Page - Unisonic Technologies |
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UTC2SA1020 Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UTC2SA1020 PNP EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-021,A SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0 µs(Typ.) *Complement to UTC 2SC2655 SOT-89 1 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current Ic -2 A Collector Power Dissipation PC 0.5 W Collector Power Dissipation PC* 1 W Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C * : Mounted on cermic substrate( 250mm2 × 0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector cut-off current ICBO VCB=-50V, IE=0 -1.0 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -1.0 µA Collector to emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -50 V DC Current Gain hFE1 hFE2 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A 70 40 240 Collector to emitter saturation voltage VCE(sat) Ic=-1A, IB=-0.05A -0.5 V Base to emitter saturation voltage VBE(sat) Ic=-1A, IB=-0.05A -1.2 V Transition frequency fT VCE=-2V, Ic=-0.5A 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 40 pF Turn-on time ton 0.1 µs Storage time tstg 1.0 µs Switching time Fall time tf 0.1 µs |
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