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2SK3530-01MR Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3530-01MR Datasheet(HTML) 1 Page - Fuji Electric |
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1 / 1 page  DATE NAME DRAWN CHECKED REVISIONS APPROVED Fuji Electric Co.,Ltd. MA4LE Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY 1) Package TO-220F 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Items Units Drain-Source Voltage V Continuous Drain Current A Pulsed Drain Current A Gate-Source Voltage V A mJ *1 Maximum Drain-Source dV/dt dVDS/dt kV/us Peak Diode recovery dV/dt dV/dt kV/us *2 W W Operating and Storage ℃ Temperature range ℃ 3)Electrical Characteristics (Tch=25℃ unless otherwise specified) Items Symbols Test Conditions min. typ. max. Units Drain-Source Breakdown Voltage BVDSS ID=250uA VGS=0V 800 --- --- V Gate Threshold Voltage VGS(th) ID=250uA VDS=VGS 3.0 --- 5.0 V VDS=800V Tch=25℃ --- --- 50 μA VGS=0V Tch=125℃ --- --- 500 μA Gate-Source Leakage Current IGSS VGS=±30V VDS=0V --- --- 100 nA Input Capacitance Ciss VDS=25V --- 830 --- Output Capacitance Coss VGS=0V --- 100 --- pF Reverse Transfer Capacitance Crss f=1MHz --- 5 --- Total Gate ChargeQg Vcc=400V --- 25 --- Gate to Source Charge Qgs ID=7A --- 7.5 --- nC Gate to Drain (Miller) Charge Qgd VGS=10V --- 7 --- Avalanche Capability IAV L=8.80mH Tch=25 ℃ 7 --- --- A Diode Forward On-Voltage VSD IF=7A,VGS=0V,Tch=25℃ --- 1.0 1.5 V 4) Thermal Characteristics Items Symbols Test Conditions min. typ. max. Units Channel to Case Rth(ch-c) 1.79 ℃/W Channel to Ambient Rth(ch-a) 58.0 ℃/W *1 L=8.80mH,Vcc=80V *2 I F≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C Non-Repetitive Maximum Avalanche Energy 2SK3530-01MR (800V/1.9 Ω/7A) VGS IAR EAS Symbols VDS ID ID(pulse) ±30 7 Ratings 800 ±7 ±28 Ω --- 1.9 235.3 20 5 70 2.16 150 -55 ∼ +150 --- IDSS RDS(on) ID=3.5A Repetitive and Non-Repetitive Maximum Avalanche Current Zero Gate Voltage Drain Current Drain-Source On-State Resistance VGS=10V Tch Tstg Maximum Power Dissipation PD @Ta=25℃ PD ＠Ｔc=25℃ MT5F12296 1/1 a Sep.-09-'02 Sep.-09-'02 |
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