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AT49BV040-90TI Datasheet(PDF) 1 Page - ATMEL Corporation

Part # AT49BV040-90TI
Description  4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
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Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT49BV040-90TI Datasheet(HTML) 1 Page - ATMEL Corporation

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1
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49LV040
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time – 70 ns
Internal Program Control and Timer
16K Bytes Boot Block with Lockout
Fast Chip Erase Cycle Time – 10 seconds
Byte-by-byte Programming – 30 µs/Byte Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
– 8 x 14 mm VSOP/TSOP
Description
The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol-
ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over
the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device conta in s a u se r-e nab led “bo ot b lo ck” prot ectio n f eatu re . Th e
AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”).
Rev. 0679D–03/01
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)


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