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AT49BV040-90TI Datasheet(PDF) 1 Page - ATMEL Corporation |
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AT49BV040-90TI Datasheet(HTML) 1 Page - ATMEL Corporation |
1 / 13 page 1 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory AT49BV040 AT49LV040 Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • 16K Bytes Boot Block with Lockout • Fast Chip Erase Cycle Time – 10 seconds • Byte-by-byte Programming – 30 µs/Byte Typical • Hardware Data Protection • Data Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles • Small Packaging – 8 x 14 mm VSOP/TSOP Description The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technol- ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA. The device conta in s a u se r-e nab led “bo ot b lo ck” prot ectio n f eatu re . Th e AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”). Rev. 0679D–03/01 Pin Configurations Pin Name Function A0 - A18 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs PLCC Top View 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A14 A13 A8 A9 A11 OE A10 CE I/O7 VSOP Top View (8 x 14 mm) or TSOP Top View (8 x 20 mm) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 A17 WE VCC A18 A16 A15 A12 A7 A6 A5 A4 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 (continued) |
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