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CMT04N60N220FP Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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CMT04N60N220FP Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 7 page  CMT04N60 POWER MOSFET 2003/06/25 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 2 ORDERING INFORMATION Part Number Package CMT04N60N220 TO-220 CMT04N60N220FP TO-220 Full Package ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT04N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS =600 V, VGS = 0 V) IDSS 0.1 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) 2.4 Ω Forward Transconductance (VDS = 50 V, ID = 2.0 A) * gFS 2.5 mhos Input Capacitance Ciss 540 760 pF Output Capacitance Coss 125 180 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 8.0 20 pF Turn-On Delay Time td(on) 12 20 ns Rise Time tr 7.0 10 ns Turn-Off Delay Time td(off) 19 40 ns Fall Time (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1Ω) * tf 10 20 ns Total Gate Charge Qg 5.0 10 nC Gate-Source Charge Qgs 2.7 nC Gate-Drain Charge (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* Qgd 2.0 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/µs) trr 655 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance |
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