Power Module

©2016 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:07/21/16

118

MG12400D-BN2MM

1200V 400A IGBT Module

Figure 7: Diode Forward Characteristics

0.6

8

.

1

2

.

1

0

0

160

480

800

320

2.4

640

0

8

4

0

24

A

20

2

4

8

12

61618

14

10

16

12

Figure 8: Switching Energy vs. Gate Resistor

16

8

0 100

200

0

800

300

40

48

400 500 600 700

32

24

Figure 9: Switching Energy vs. Forward Current

Rectangular Pulse Duration (seconds)

0.001

0.01

0.1

1

10

0.001

0.1

1

Diode

IGBT

0.01

Figure 10:Transient Thermal Impedance

4