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ZEN098V230A16LS Datasheet(PDF) 3 Page - Littelfuse |
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ZEN098V230A16LS Datasheet(HTML) 3 Page - Littelfuse |
3 / 9 page PolyZen Polymer Enhanced Zener Diode Micro-Assemblies PRODUCT: ZEN098V230A16LS DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 3 OF 8 © 2016 Littelfuse,Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016 GENERAL SPECIFICATIONS Operating Temperature -40º to +85ºC Storage Temperature -40º to +85ºC ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) VZ 4 (V) Izt 4 (A) IHOLD 5 @20ºC (A) Leakage Current R Typ6 (Ohms) R1Max 7 (Ohms) VInt Max 8 (V) IFLT Max 9 Tripped Power Dissipation 10 Max VINT Max (V) Test Current (A) IFLT Max (A) Test Voltage (V) Value (W) Test Voltage (V) Min Typ Max Test Voltage Max Current (mA) 9.6 9.8 10.0 0.1 2.3 9.5 5.0 0.04 0.06 16V 5A +3.5 -40 +16 -12 1.0 16 Note 1: Electrical characteristics determined at 25ºC unless otherwise specified. Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact, Littelfuse Circuit Protection Division directly. Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener. Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow soldering. Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24 hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating. Note 9: IFLT Max: IFLT Max relates to the steady state current flowing through the diode portion of the PolyZen device in a fault condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots) survived 100 test cycles. RMS fault current above IFLT Max may permanently damage the diode portion of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating. Note 10: The power dissipated by the device when in the “tripped” state, as measured on Littelfuse test boards (see note 3). Note 11: Specifications based on limited qualification data and subject to change. MECHANICAL DIMENSIONS Min Typical Max Length L 3.85 mm (0.152”) 4 mm (0.16”) 4.15 mm (0.163") Width W 3.85 mm (0.152”) 4 mm (0.16”) 4.15 mm (0.163") Height H 1.4mm (0.055”) 1.7 mm (0.067”) 2.0 mm (0.081”) Length Diode Ld - 3.0 mm (0.118”) - Height Diode Hd - 1.0 mm (0.039”) - Offset O1 - 0.6 mm (0.024”) - Offset O2 - 0.7 mm (0.028”) - |
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