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FDI3632 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDI3632 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2004 Fairchild Semiconductor Corporation FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1 Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Resistive Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 0.12mH, IAS = 75A, VDD = 80V. 2: Pulse Width = 100s Device Marking Device Package Reel Size Tape Width Quantity FDB3632 FDB3632 TO-263AB 330mm 24mm 800 units FDP3632 FDP3632 TO-220AB Tube N/A 50 units FDI3632 FDI3632 TO-262AA Tube N/A 50 units FDH3632 FDH3632 TO-247 Tube N/A 30 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V IDSS Zero Gate Voltage Drain Current VDS = 80V - - 1 µA VGS = 0V TC= 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID=80A, VGS=10V - 0.0075 0.009 Ω ID =40A, VGS = 6V, - 0.009 0.015 ID=80A, VGS=10V, TC=175 oC - 0.018 0.022 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 6000 - pF COSS Output Capacitance - 820 - pF CRSS Reverse Transfer Capacitance - 200 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 50V ID = 80A Ig = 1.0mA - 84 110 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 11 14 nC Qgs Gate to Source Gate Charge - 30 - nC Qgs2 Gate Charge Threshold to Plateau - 20 - nC Qgd Gate to Drain “Miller” Charge - 20 - nC tON Turn-On Time VDD = 50V, ID = 80A VGS = 10V, RGS = 3.6Ω - - 102 ns td(ON) Turn-On Delay Time - 30 - ns tr Rise Time - 39 - ns td(OFF) Turn-Off Delay Time - 96 - ns tf Fall Time - 46 - ns tOFF Turn-Off Time - - 213 ns VSD Source to Drain Diode Voltage ISD = 80A - - 1.25 V ISD = 40A - - 1.0 V trr Reverse Recovery Time ISD = 75A, dISD/dt= 100A/µs- - 64 ns QRR Reverse Recovered Charge ISD = 75A, dISD/dt= 100A/µs - - 120 nC |
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