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BQ25600YFFT Datasheet(PDF) 9 Page - Texas Instruments |
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BQ25600YFFT Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 66 page  9 bq25600, bq25600D www.ti.com SLUSCJ4 – JUNE 2017 Product Folder Links: bq25600 bq25600D Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Electrical Characteristics (continued) VVAC_UVLOZ < VVAC < VVAC_OV and VVAC > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VVAC_OV_RISE VAC 6.5-V Overvoltage rising threshold VAC rising; OVP (REG06[7:6]) = '01' 6.1 6.42 6.75 V VVAC_OV_RISE VAC 10.5-V Overvoltage rising threshold VAC rising, OVP (REG06[7:6]) = '10' 10.35 11 11.5 V VVAC_OV_RISE VAC 14-V Overvoltage rising threshold VAC rising, OVP (REG06[7:6]) = '11' 13.5 14.2 15 V VVAC_OV_HYS VAC 6.5-V Overvoltage hysteresis VAC falling, OVP (REG06[7:6]) = '01' 130 mV VVAC_OV_HYS VAC 10.5-V Overvoltage hysteresis VAC falling, OVP (REG06[7:6]) = '10' 250 mV VVAC_OV_HYS VAC 14-V Overvoltage hysteresis VAC falling, OVP (REG06[7:6]) = '11' 300 mV VBAT_UVLOZ BAT for active I2C, no adapter VBAT rising 2.5 V VBAT_DPL_FALL Battery Depletion Threshold VBAT falling 2.18 2.62 V VBAT_DPL_RISE Battery Depletion Threshold VBAT rising 2.34 2.86 V VBAT_DPL_HYST Battery Depletion rising hysteresis VBAT rising 180 mV VBUSMIN_FALL Bad adapter detection falling threshold VBUS falling 3.68 3.8 3.9 V VBUSMIN_HYST Bad adapter detection hysteresis 180 mV IBADSRC Bad adapter detection current source Sink current from VBUS to GND 30 mA POWER-PATH VSYS_MIN System regulation voltage VVBAT < SYS_MIN[2:0] = 101, BATFET Disabled (REG07[5] = 1) 3.5 3.68 V VSYS System Regulation Voltage ISYS = 0 A, VVBAT > VSYSMIN, VVBAT = 4.400 V, BATFET disabled (REG07[5] = 1) VBAT + 50 mV V VSYS_MAX Maximum DC system voltage output ISYS = 0 A, , Q4 off, VVBAT≤ 4.400 V, VVBAT > VSYSMIN = 3.5V 4.4 4.45 4.48 V RON(RBFET) Top reverse blocking MOSFET on- resistance between VBUS and PMID - Q1 -40°C ≤ TA ≤ 125°C 35 mΩ RON(HSFET) Top switching MOSFET on- resistance between PMID and SW - Q2 VREGN = 5 V , -40°C≤ TA ≤ 125°C 55 mΩ RON(LSFET) Bottom switching MOSFET on- resistance between SW and GND - Q3 VREGN = 5 V , -40°C≤ TA ≤ 125°C 60 mΩ VFWD BATFET forward voltage in supplement mode 30 mV RON(BAT-SYS) SYS-BAT MOSFET on-resistance QFN package, Measured from BAT to SYS, VBAT = 4.2V, TJ = –40 - 125°C 19.5 mΩ BATTERY CHARGER VBATREG_RANGE Charge voltage program range 3.856 4.624 V VBATREG_STEP Charge voltage step 32 mV VBATREG Charge voltage setting VREG (REG04[7:3]) = 4.208 V (01011), V, –40 ≤ TJ ≤ 85°C 4.187 4.208 4.229 V VREG (REG04[7:3]) = 4.352 V (01111), V, –40 ≤ TJ ≤ 85°C 4.330 4.352 4.374 V VBATREG_ACC Charge voltage setting accuracy VBAT = 4.208 V or VBAT = 4.352 V, –40 ≤ TJ ≤ 85°C –0.5% 0.5% ICHG_REG_RANGE Charge current regulation range 0 3000 mA |
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