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60N06-18 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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60N06-18 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 60N06-18 · DESCRIPTION · High current capability · Avalanche rugged technology · Low gate charge · Fast Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Regulator · High current,high speed switching · Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 60 A Drain Current-continuous@ TC=100℃ 39 ID(puls) Pulse Drain Current 120 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃ /W |
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