Electronic Components Datasheet Search |
|
GS8673ED18BGK-675I Datasheet(PDF) 9 Page - GSI Technology |
|
GS8673ED18BGK-675I Datasheet(HTML) 9 Page - GSI Technology |
9 / 32 page GS8673ED18/36BK-675/625/550/500 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.06 5/2012 9/31 © 2011, GSI Technology Functional Description Separate I/O ECCRAMs, from a system architecture point of view, are attractive in applications that execute continuous back-to-back alternating Reads and Writes. Therefore, the SigmaQuad-IIIe ECCRAM interface and truth table are optimized for continuously alternating Reads and Writes. Separate I/O ECCRAMs are unpopular in applications where block transfers of Reads or Writes are needed because half of the data pins will go unused during the block transfer, potentially cutting Separate I/O ECCRAM data bandwidth in half. Applications of this sort are better served by Common I/O ECCRAMs such as the SigmaDDR-IIIe series. Truth Table Previous Operation SA R W Current Operation D Q (tn–1) ↑CK (tn) ↑CK (tn) ↑CK (tn) (tn) ↑KD (tn+1) ↑KD (tn+1½) ↑KD (tn+2) ↑KD (tn+2½) ↑CK (tm) ↑CK (tm+180º) ↑CK (tm+1) ↑CK (tm+1+180º) NOP X 1 1 NOP X X — — Hi-Z/0 Hi-Z/0 — — Write X 1 X NOP D3 D4 — — Hi-Z/0 Hi-Z/0 — — Read X X 1 NOP X X — — Q3 Q4 — — NOP V 1 0 Write D1 D2 D3 D4 Hi-Z/0 Hi-Z/0 — — Read V X 0 Write D1 D2 D3 D4 Q3 Q4 — — NOP V 0 X Read X X — — Q1 Q2 Q3 Q4 Write V 0 X Read D3 D4 — — Q1 Q2 Q3 Q4 Notes: 1. 1 = input High; 0 = input Low; V = input valid; X = input don’t care. 2. tm= tn + RL, where RL = Read Latency of the device. 3. D1, D2, D3, and D4 indicate the first, second, third, and fourth pieces of Write Data transferred during Write operations. 4. Q1, Q2, Q3, and Q4 indicate the first, second, third, and fourth pieces of Read Data transferred during Read operations. 5. When D input termination is disabled (MZT[1:0] = 00), Q drivers are disabled (i.e. Q pins are tri-stated) for one cycle in response to NOP and Write commands, RL cycles after the command is sampled, except when preceded by a Read command. 6. When D input termination is enabled (MZT[1:0] = 01 or 10), Q drivers are enabled Low (i.e. Q pins are driven Low) for one cycle in response to NOP and Write commands, RL cycles after the command is sampled, except when preceded by a Read command. This is done so the Memory Controller can enable On-Die Termination on its data inputs without having to cope with the termination pulling tri-stated data inputs to VDDQ/2 (i.e., to the switch point of the data input receivers). |
Similar Part No. - GS8673ED18BGK-675I |
|
Similar Description - GS8673ED18BGK-675I |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |