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FMDS55N02 Datasheet(PDF) 1 Page - First Components International |
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FMDS55N02 Datasheet(HTML) 1 Page - First Components International |
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1 / 2 page  Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (T A = 25 oC unless otherwise noted) Symbol Limit Unit VDS 25 VGS + 20 ID 55 IDM 350 TA = 25 oC 70 TA = 75 oC 42 TJ, Tstg -55 to 150 oC EAS 300 mJ RθJC 1.8 Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 40 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation TO-252 (D-PAK) VDS= 25V RDS(ON), Vgs@10V, Id@30A = 6mΩ R DS(ON), Vgs@4.5V, Id@30A = 9mΩ FMD S55N25 25V N-Channel Enhancement-Mode MOSFET |
Similar Part No. - FMDS55N02 |
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Similar Description - FMDS55N02 |
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