FMF4N60 datasheet(2/7 Pages) FCI

Part #	FMF4N60

Description	4A 600V N CHANNEL ISOLATED POWER MOSFET

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Manufacturer	FCI [First Components International]

Direct Link	http://www.cotra.com.tw/

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Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

600

-

V

Δ

BVDSS/

Δ

TJ

Breakdown Voltage Temperature

coefficient

ID = 250uA, referenced to 25 °C

-

0.6

-

V/°C

IDSS

Drain-Source Leakage Current

VDS = 600V, VGS = 0V

--

10

uA

VDS = 480V, TC = 125 °C

--

100

uA

IGSS

Gate-Source Leakage, Forward

VGS = 30V, VDS = 0V

--

100

nA

Gate-source Leakage, Reverse

VGS = -30V, VDS = 0V

-

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250uA

2.0

-

4.0

V

RDS(ON)

Static Drain-Source On-state Resis-

tance

VGS =10 V, ID = 2.0A

-2.0

2.5

Ω

Dynamic Characteristics

Ciss

Input Capacitance

VGS =0 V, VDS =25V, f = 1MHz

-

545

710

pF

Coss

Output Capacitance

-

60

80

Crss

Reverse Transfer Capacitance

-

811

Dynamic Characteristics

td(on)

Turn-on Delay Time

VDD =300V, ID =4.0A, RG =25Ω

(Note 4, 5)

-

10

30

ns

tr

Rise Time

-

35

80

td(off)

Turn-off Delay Time

-

45

100

tf

Fall Time

-

40

90

Qg

Total Gate Charge

VDS =480V, VGS =10V, ID =4.0A

(Note 4, 5)

-

15

20

nC

Qgs

Gate-Source Charge

-

2.8

-

Qgd

Gate-Drain Charge(Miller Charge)

-

6.2

-

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit.

IS

Continuous Source Current

Integral Reverse p-n Junction

Diode in the MOSFET

--

4.0

A

ISM

Pulsed Source Current

-

16

VSD

Diode Forward Voltage

IS =4.0A, VGS =0V

-

1.4

V

trr

Reverse Recovery Time

IS=4.0A, VGS=0V, dIF/dt=100A/us

-300

-

ns

Qrr

Reverse Recovery Charge

-

2.2

-

uC

※ NOTES

1. Repeativity rating : pulse width limited by junction temperature

2. L = 27.5mH, IAS =4.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C

3. ISD ≤ 4.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

FMF4N60 4A 600V N CHANNEL ISOLATED POWER MOSFET

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