MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC36V4450A

4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET

DESCRIPTION

FEATURES

Class A operation

Internally matched to 50(ohm) system

High output power

P1dB = 4W (TYP.) @ f=4.4~5.0GHz

High power gain

GLP = 12 dB (TYP.) @ f=4.4~5.0GHz

High power added efficiency

P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz

Low distortion [ item -51 ]

IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.

APPLICATION

item 01 : 4.4~5.0 GHz band power amplifier

item 51 : 4.4~5.0 GHz band digital radio communication

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V)

ID = 1.2(A)

Refer to Bias Procedure

RG= 100 (ohm)

ABSOLUTE MAXIMUM RATINGS

(Ta=25 deg.C)

Symbol

Parameter

Ratings

Unit

VGDO

Gate to drain voltage

-15

V

VGSO

Gate to source voltage

-15

V

ID

Drain current

3.75

A

IGR

Reverse gate current

-10

mA

IGF

Forward gate current

21

mA

PT

Total power dissipation *1

25

W

Tch

Channel temperature

175

deg.C

Tstg

Storage temperature

-65 / +175

deg.C

*1 : Tc=25 deg.C

ELECTRICAL CHARACTERISTICS

(Ta=25 deg.C)

Limits

Min.

Typ.

Max.

IDSS

Saturated drain current

VDS=3V, VGS=0V

-

-

3.75

A

gm

Transconductance

VDS=3V, ID=1.1A

-

1

-

S

VGS(off)

Gate to source cut-off voltage

VDS=3V, ID=10mA

-

-

-4.5

V

P1dB

Output power at 1dB gain compression

35

37

-

dBm

GLP

Linear power gain

VDS=10V, ID(RF off)=1.2A, f=4.4~5.0GHz

9

12

-

dB

ID

Drain current

-

-

1.8

A

P.A.E.

Power added efficiency

-

32

-

%

IM3

3rd order IM distortion

*1

-42

-45

-

dBc

Rth(ch-c)

Thermal resistance

*2

Delta Vf method

-

5

6

deg.C/W

*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=5GHz, Delta f=10MHz

*2 : Channel to case

MITSUBISHI

June/2004

ELECTRIC

The MGFC36V4450A is an internally impedance-matched

GaAs power FET especially designed for use in 4.4 ~ 5.0

GHz band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

Parameter

Test conditions

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal injury, fire

or property damage. Remember to give due consideration to

safety when making your circuit designs, with appropriate

measures such as (1)placement of substitutive, auxiliary

circuits, (2)use of non-flammable material or (3)prevention

against any malfunction or mishap.

Symbol

Unit

12.0

21.0 +/-0.3

10.7

(1)

17.0 +/-0.2

GF-8

(2)

OUTLINE DRAWING

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

R-1.6

(3)

(2)

0.6 +/-0.15

Unit : millimeters