©2004 Fairchild Semiconductor Corporation

Rev. A1, August 2004

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

40

V

Collector-Base Voltage

75

V

Emitter-Base Voltage

6.0

V

Collector Current

1.0

A

Operating and Storage Junction Temperature Range

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage *

40

V

Collector-Base Breakdown Voltage

75

V

Emitter-Base Breakdown Voltage

6.0

V

Collector Cutoff Current

10

nA

Collector Cutoff Current

0.01

10

µA

µA

Emitter Cutoff Current

10

µA

Base Cutoff Current

20

µA

On Characteristics

DC Current Gain

35

50

75

35

100

50

40

300

Collector-Emitter Saturation Voltage *

0.3

1.0

V

V

Base-Emitter Saturation Voltage *

0.6

1.2

2.0

V

V

NPN General Purpose Amplifier

• This device is for use as a medium power amplifier and switch

requiring collector currents up to 500mA.

• Sourced from process 19.

PN2222A

MMBT2222A

PZT2222A

EB C

TO-92

SOT-23

SOT-223

Mark:1P

C

B

E

E

B

C

C