BRCS3443MF datasheet(2/9 Pages) FOSHAN

Part #	BRCS3443MF

Description	P-channel MOSFET in a SOT23-6 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 9 page

BRCS3443MF

Rev.D Oct.-2015

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Drain-Source Voltage

VDSS

-20

V

Drain Current – Continuous(Note 1)

ID(Ta=25℃)

-4.4

A

Drain Current – Pulsed(Note 1)

Tp<10μS

IDM

-20

A

Gate-Source Voltage

VGS

±12

V

Maximum Power Dissipation(Note 1)

PD(Ta=25℃)

2.0

W

Maximum Junction-to-Ambient(Note 1)

RθJA

62.5

/ W

℃

Maximum Junction-to-Lead

TL

260

℃

Junction and Storage Temperature Range

Tj, Tstg

-55

～150

℃

Note:

1.Mounted onto a 2 in square FR−4 board (1"sq. 2 oz.cu.0.06",thick single sided),t<5.0seconds.

电性能参数 / Electrical Characteristics(Ta=25℃) (Notes2&3)

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Drain-Source Breakdown Voltage V(BR)DSS VGS=0V

ID=-10μA

-20

V

Drain-Source Leakage Current

IDSS

VDS=-20V

VGS=0V

Tj=25℃

-1.0

μA

VDS=-10V

VGS=0V

Tj=70℃

-5.0

μA

Gate-Source Leakage Current

IGSS

VGS=±12V

VDS=0V

±100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS

ID=-250μA

-0.55

-0.72

-1.45

V

Static Drain-Source

On-Resistance

RDS(on)

VGS=-4.5V

ID=-4.4A

0.058

0.065

Ω

VGS=-2.7V

ID=-3.7A

0.082

0.090

VGS=-2.5V

ID=-3.5A

0.092

0.100

Forward Transconductance

gFS

VDS=-10V

ID=-4.4A

8.8

S

Forward On Voltage

VSD

VGS=0V

IS=-1.7A

-0.83

-1.2

V

Input Capacitance

Ciss

VDS=-5.0V

VGS=0V

f=1.0MHz

565

pF

Output Capacitance

Coss

320

Reverse Transfer Capacitance

Crss

120

极限参数 / Absolute Maximum Ratings(TJ=25℃)

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BRCS3443MF Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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