NTHD4P02F datasheet(3/8 Pages) ONSEMI

Part #	NTHD4P02F

Description	Power MOSFET and Schottky Diode

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NTHD4P02F

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TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

−2 V

100

°C

0

4

5

3

6

3

2

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

2

1

0

1

Figure 1. On−Region Characteristics

0.5

4

2

1.5

2.5

3

2

1

0

3

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

35

0.3

0.2

0

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.4

1.2

1

0.8

0.6

50

125

100

Figure 5. On−Resistance Variation with

Temperature

−TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.5

24

TC = −55°C

ID = −2.1 A

TJ = 25°C

75

150

ID = −2.1 A

VGS = −4.5 V

4

25

°C

1.6

−1.2 V

16

24

8

10

20

16

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

VGS = 0 V

TJ = 150°C

TJ = 100°C

−1.4 V

−1.6 V

−1.8 V

100

1000

10000

78

−2.2 V

VDS ≥ −10 V

0.4

610

18

14

VGS = −2.4 V

VGS = −6 V to −3 V

0.1

0.125

0.15

0.175

0.2

0.225

0.5

1.5

2.5

3.5

0.25

TJ = 25°C

VGS = −4.5 V

VGS = −2.5 V

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