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S3PDB99N16 Datasheet(PDF) 3 Page - Sirectifier Semiconductors |
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S3PDB99N16 Datasheet(HTML) 3 Page - Sirectifier Semiconductors |
3 / 3 page Three Phase Rectifier Modules S3PDB99NXX 0.5 1.0 1.5 2.0 0 T = 25°C vj T = 150°C vj V (V) F 50 100 150 200 Forward current versus voltage drop per diode Surge overload current per diode IFSM: Crest value t: duration 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] I (A) FSM TVJ=45°C TVJ=150°C 550 500 I ------ IFSM F(OV) 0 VRRM 1/2 VRRM 1 VRRM 50 100 150 200 DC sin.180° rec.120° rec.60° rec.30° T (°C) C IdAV [A] 100 120 80 60 40 20 0 Maximum forward current at case temperature Transient thermal impedance per diode 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 K/W Zth t[s] Z thJK Z thJC P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
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