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AN957 Datasheet(PDF) 10 Page - List of Unclassifed Manufacturers |
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10 / 13 page AN-957 (v.Int) Figure 22. Test circuit for gate charge Figure 25. Test fixture for HEXFET test Qg = (t3 - t0) ig, Qgd = (t2 - t1) ig, Qgs = Qg - Qgd VSD Body-Drain Diode Voltage Drop The current source may consist or a voltage source and a series resistor, as shown in Figure 24. The voltage should be applied in short pulses (less than 300 microsec) with a low duty cycle (less than 2%). trr, Qrr Body-Drain Diode Reverse Recovery Time and Reverse Recovery Charge Several test circuits are commonly used to charac-terize these parameters. Some have been qualified by JEDEC. The data sheet indicates the test method used for the specific device. 12. A fixture to speed-up testing time The most commonly tested parameters in a MOS- gated transistor are gate- source leakage (IGSS), drain-source resistance (RDS(on)), breakdown voltage (BVDSS), drain current (IDSS), source- drain voltage (VSD), threshold (VGS(th)), and so on. These tests can be greatly simplifyed with the fixture shown in Figure25. S D G 1.5mA OSCILLOSCOPE V DS ≤ ≤ 0.8 x 200V I D V GS 10V V 2 V 1 t 0 t 1 t 2 t 3 t OSCILLOSCOPE or DVM S D G I S 330 Ω Ω G 30V 30V S D SENSE S SENSE 1 2 3 4 1 2 3 4 1 2 3 4 C SENSE E SENSE C B E TO CURVE TRACER TO PVT Figure 24. Test circuit MOSFET diode drop Figure 23. Gate charge waveforms To Order Index |
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