2SC2714 datasheet(2/6 Pages) FOSHAN

Part #	2SC2714

Description	Silicon NPN transistor in a SOT-23 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC2714

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

4.0

V

Collector Current

IC

20

mA

Emitter Current

IE

-20

mA

Collector Power Dissipation

PC

100

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=18V

IE=0

0.5

μA

Emitter Base Cut-Off Current

IEBO

VEB=4.0V

IC=0

0.5

μA

DC Current Gain

hFE

VCE=6.0V

IC=1.0mA

40

200

Transition Frequency

fT

VCE=6.0V

IC=1.0mA

550

MHz

Conversion gain

Gpe

VCE=6.0V

IE=-1.0mA

f=100MHz

15

18

dB

Noise Figure

NF

VCE=6.0V

IE=-1.0mA

f=100MHz

2.5

5.0

dB

Collector to Base Time Constant

Cc.rbb’

VCE=6.0V

IE=-1.0mA

f=30MHz

30

ps

Reverse Transfer Capacitance

(Common emitter)

Cre

VCE=6.0V

f=1.0MHz

0.70

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SC2714 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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