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DRV5012AEDMRT Datasheet(PDF) 7 Page - Texas Instruments

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Part # DRV5012AEDMRT
Description  Ultra-Low-Power Digital-Latch Hall-Effect Sensor
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

DRV5012AEDMRT Datasheet(HTML) 7 Page - Texas Instruments

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B
PCB
GND
OUT
SEL
REF
Output
Control
Voltage
Regulator
Ultra-low-power
Oscillator
Element Bias
Offset
Cancellation
Temperature
Compensation
Amp
VCC
VCC
0.1 F
(min)
Copyright © 201 7, Texas Instrumen ts Incorpor ate d
7
DRV5012
www.ti.com
SLVSDD5 – AUGUST 2017
Product Folder Links: DRV5012
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
7 Detailed Description
7.1 Overview
The DRV5012 device is a magnetic sensor with a digital output that latches the most recent pole measured.
Applying a south magnetic pole near the top of the package causes the output to drive low, a north pole causes
the output to drive high, and the absence of a magnetic field causes the output to continue to drive the previous
state, whether low or high.
The device integrates a Hall effect element, analog signal conditioning, and a low-frequency oscillator that
enables ultra-low average power consumption. By operating from a 1.65-V to 5.5-V supply, the device
periodically measures magnetic flux density, updates the output, and enters a low-power sleep state. A logic
input pin, SEL, sets the sampling frequency to 20 Hz or 2.5 kHz with a tradeoff in power consumption.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Magnetic Flux Direction
The DRV5012 device is sensitive to the magnetic field component that is perpendicular to the top of the package
(as shown in Figure 7).
Figure 7. Direction of Sensitivity


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