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LP8860BQVFPRQ1 Datasheet(PDF) 7 Page - Texas Instruments |
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LP8860BQVFPRQ1 Datasheet(HTML) 7 Page - Texas Instruments |
7 / 110 page 7 LP8860-Q1 www.ti.com SNVSA21F – MAY 2014 – REVISED JULY 2017 Product Folder Links: LP8860-Q1 Submit Documentation Feedback Copyright © 2014–2017, Texas Instruments Incorporated (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to the potential at the GND pins. (3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 165°C (typical) and disengages at TJ = 135°C (typical). (4) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 150°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX ). (5) For detailed soldering specifications and information, refer to PowerPAD™ Thermally Enhanced Package Application Note . 7 Specifications 7.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT Voltage on pins VSENSE_N, VSENSE_P, OUT1 to OUT4, FB, SD –0.3 52 V Voltage on pins VDD, FILTER, SYNC, VSYNC, PWM, SCLK/SCL, MOSI/SDA, MISO, NSS, VDDIO/EN, IF, ISENSE, ISENSE_GND, FAULT, ISET, TSENSE, C1N –0.3 6 V Voltage on pins C1P, CPUMP, GD, SQW –0.3 12 V Continuous power dissipation(3) Internally Limited Ambient temperature, TA (4) –40 125 °C Junction temperature, TJ (4) –40 150 °C Maximum lead temperature (soldering) See(5) °C Storage temperature, Tstg –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 All pins ±500 Corner pins (1,8,9,16,17,24,25,32) ±750 (1) All voltages are with respect to the potential at the GND pins. 7.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltage on pins VSENSE_N, VSENSE_P 3 48 V VDD input voltage 3 5.5 V VDDIO/EN input voltage 1.65 VDD V Voltage on pins FILTER, ISENSE, ISENSE_GND, ISET, TSENSE, C1N 0 5.5 V FAULT, PWM, SCLK/SCL, MOSI/SDA, NSS, IF, SYNC, MISO, VSYNC 0 VDDIO V Voltage on pins C1P, CPUMP, GD, SQW 0 11 V Voltage on pins OUT1 to OUT4, FB, SD 0 48 V |
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