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RA13H4047M-E01 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA13H4047M-E01 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
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1 / 9 page  MITSUBISHI RF MOSFET MODULE RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO RA13H4047M MITSUBISHI ELECTRIC 24 April 2003 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD ≅0 @ V DD=12.5V, VGG=0V) • Pout>13W, η T>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA13H4047M-E01 RA13H4047M-01 (Japan - packed without desiccator) Antistatic tray, 10 modules/tray BLOCK DIAGRAM 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) 3 2 4 1 5 PACKAGE CODE: H2S |
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