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RA35H1516M-01 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA35H1516M-01 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 8 page MITSUBISHI RF MOSFET MODULE RA35H1516M 154-162MHz 40W 12.5V MOBILE RADIO RA35H1516M MITSUBISHI ELECTRIC 15 April 2003 1/8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD ≅0 @ V DD=12.5V, VGG=0V) • Pout>40W, η T>50% @ VDD=12.5V, VGG=5V, Pin=50mW • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA35H1516M-E01 RA35H1516M-01 (Japan - packed without desiccator) Antistatic tray, 10 modules/tray BLOCK DIAGRAM 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) 3 2 4 1 5 |
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