2SC2275A datasheet(2/6 Pages) FOSHAN

Part #	2SC2275A

Description	Silicon NPN transistor in a TO-220F Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC2275(A)

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

2SC2275

120

V

2SC2275A

150

Collector to Emitter Voltage

VCEO

2SC2275

120

V

2SC2275A

150

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

1.5

A

Collector Power Dissipation

PC

1.5

W

Collector Power Dissipation

PC(Tc=25℃)

25

W

Junction Temperature Range

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base

Breakdown Voltage

VCBO

2SC2275

IC=1.0mA

IE=0

120

V

2SC2275A

150

Collector to Emitter

Breakdown Voltage

VCEO

2SC2275

IC=10mA

RBE=∞

120

V

2SC2275A

150

Emitter to Base Breakdown

Voltage

VEBO

IE=1.0mA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=120V

IE=0

1.0

μA

DC Current Gain

hFE(1)

VCE=5.0V IC=300mA

60

320

hFE(2)

VCE=5.0V IC=500mA

30

Collector to Emitter

Saturation Voltage

VCE(sat)

IC=1000mA IB=100mA

2.0

V

Base to Emitter Saturation

Voltage

VBE(sat)

IC=1000mA IB=100mA

1.5

V

Transition Frequency

fT

VCE=5.0V IC=200mA

200

MHz

Collector output capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

19

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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