BFR93A datasheet(2/6 Pages) FOSHAN

Part #	BFR93A

Description	Silicon NPN transistor in a SOT-23 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

BFR93A

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

2.0

V

Collector Current - Continuous

IC

35

mA

Collector Power Dissipation

PC

300

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=100μA

IE=0

15

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=500μA

IB=0

12

V

Emitter to Base Breakdown Voltage

VEBO

IE=100μA

IC=0

2.0

V

Collector Cut-Off Current

ICBO

VCB=5.0 V

IE=0

0.05

μA

DC Current Gain

hFE

VCE=5.0V

IC=30mA

40

90

Collector Capacitance

Cc

IE=0

VCB=5.0V

f=1.0MHz

0.7

pF

Emitter Capacitance

Ce

VEB=0.5V

IC=0

f=1.0MHz

1.9

pF

Feedback Capacitance

Cre

VCE=5.0V

IC=0

Tamb=25℃

f=1.0MHz

0.6

pF

Transition Frequency

fT

IC=30mA

VCE=5.0V

f=500MHz

4.5

6.0

GHz

IC=30mA

VCE=8.0V

f=1.0GHz

Tamb=25℃

13

dB

Maximum Unilateral Power Gain

GUM

IC=30mA

VCE=8.0V

f=2.0GHz

Tamb=25℃

7.0

dB

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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