2SC2688 datasheet(2/6 Pages) FOSHAN

Part #	2SC2688

Description	Silicon NPN transistor in a TO-126F Plastic Package.

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

2SC2688

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

300

V

Collector to Emitter Voltage

VCEO

300

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

200

mA

Collector Power Dissipation

PC

1.25

W

Collector Power Dissipation

PC(Tc=25℃)

10

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=200V

IE=0

0.1

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.1

μA

DC Current Gain

hFE

VCE=10V

IC=10mA

40

250

Collector to Emitter Saturation

Voltage

VCE(sat) IC=50mA

IB=5.0mA

1.5

V

Transition Frequency

fT

VCE=30V

IC=10mA

50

80

MHz

Reverse Transfer Capacitance

Cre

VCB=30V

IE=0

f=1.0MHz

3.0

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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2SC2688 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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