KSD471A datasheet(2/6 Pages) FOSHAN

Part #	KSD471A

Description	Silicon NPN transistor in a TO-92 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

KSD471A

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

30

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

1.0

A

Collector Power Dissipation

PC

800

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=100μA

IE=0

40

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

30

V

Emitter to Base Breakdown

Voltage

VEBO

IE=100μA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=30V

IE=0

0.1

μA

DC Current Gain

hFE

VCE=1.0V

IC=100mA

70

400

Collector-Emitter Saturation

Voltage

VCE(sat) IC=1.0A

IB=0.1A

0.5

V

Base -Emitter Saturation Voltage

VBE(sat) IC=1.0A

IB=0.1A

1.2

V

Current Gain Bandwidth Product

fT

VCE=6.0V

IC=10mA

130

MHz

Output Capacitance

Cob

VCB=6.0V

IE=0

f=1.0MHz

16

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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KSD471A Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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