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STBV45 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Part No. STBV45
Description  Silicon NPN transistor in a TO-92 Plastic Package
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Maker  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Homepage  http://www.fsbrec.com/
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STBV45
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCES
700
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
0.75
A
Peak Collector Current - Continuous
ICM
1.5
A
Base Current - Continuous
IB
0.4
A
Peak Base Current - Continuous
IBM
0.75
A
Collector Power Dissipation
PC
0.95
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCES
IC=1mA
VBE=0
700
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=10mA
IB=0
400
V
Emitter to Base Breakdown
Voltage
VEBO
IE=1mA
IC=0
9
V
Collector Cut-Off Current
ICEV
VCE=700V
VBE=-1.5V
0.1
mA
Collector cut-off current
ICEO
VCE=400V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
DC Current Gain
*hFE(1)
VCE=5.0V
IC=0.2A
10
30
*hFE(2)
VCE=5.0V
IC=0.4A
5
20
Collector to Emitter Saturation
Voltage
*VCE(sat)1 IC=0.2A
IB=0.04A
0.2
0.5
V
*VCE(sat)2 IC=0.3A
IB=0.075A
0.3
1.0
V
*VCE(sat)3 IC=0.4A
IB=0.135A
0.4
1.5
V
Base to Emitter Saturation Voltage
*VBE(sat)1 IC=0.2A
IB=0.04A
1.0
V
*VBE(sat)2 IC=0.3A
IB=0.075A
1.2
V
Fall time
tf
VCE=5V
IC=100mA
(UI9600)
0.6
μS
Storage time
ts
4.0
μS
Transition Frequency
fT
VCE=10V
IC=50mA
f=1MHz
5
MHz
*脉冲测试:脉冲周期=300μS,占空比=1.5%。
*Pulsed:Pulsed duration=300μs,duty cycle≤1.5%.
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)




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