ZTX750 datasheet(2/6 Pages) FOSHAN

Part #	ZTX750

Description	Silicon PNP transistor in a TO-92 Plastic Package

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Manufacturer	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Direct Link	http://www.fsbrec.com/

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2 / 6 page

ZTX750

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

-60

V

Collector to Emitter Voltage

VCEO

-45

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-2.0

A

Peak Collector Current- Continuous

ICM

-6.0

A

Collector Power Dissipation

PC

1.0

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=-100μA

-60

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=-10mA

-45

V

Emitter to Base Breakdown

Voltage

VEBO

IE=-100μA

-5.0

V

Collector Cut-Off Current

ICBO

VCB=-45V

IE=0

-0.1

μA

Emitter Cut-Off Current

IEBO

VEB=-4.0V

IC=0

-0.1

μA

DC Current Gain

hFE

IC=-500mA

VCE=-2.0V

100

300

Collector to Emitter Saturation

Voltage

VCE(sat)(1)

IC=-1.0A

IB=-100mA

-0.15

-0.3

V

VCE(sat)(2)

IC=-2.0A

IB=-200mA

-0.28

-0.5

V

Base to Emitter Saturation

Voltage

VBE(sat)

IC=-1.0A

IB=-100mA

-0.9

-1.25

V

Transition Frequency

fT

VCE=-5.0V

IC=-100mA

f=100MHz

100

140

MHz

Output Capacitance

Cob

VCB=-10V

f=1.0MHz

30

pF

Turn-On Time

Ton

VCC=-10V

IC=-500mA

IB1=IB2=-50mA

40

ns

Turn-Off Time

Toff

VCC=-10V

IC=-500mA

IB1=IB2=-50mA

450

ns

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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