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STN444DN Datasheet(PDF) 1 Page - Stanson Technology

Part No. STN444DN
Description  N Channel Enhancement Mode MOSFET
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STN444DN
N Channel Enhancement Mode MOSFET
100A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN444DN 2016 V1
DESCRIPTION
STN444DN uses Trench MOSFET technology that is uniquely optimized to provide the most
efficient nigh frequency switching performance. It has been optimized for low gate charge,
low RDS(ON) and fast switching speed.
PIN CONFIGURATION
PowerPAK 5x6L(1212-8)
Y:Year Code
A:Date Code
B:Package Code
C:Wafer Code
FEATURE
l
30V/30A, RDS(ON) = 2.6mΩ(Typ.)
@VGS = 10V
l
30V/15A, RDS(ON) = 3.4mΩ
@VGS = 4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and
maximum DC current capability
l
PowerPAK 5x6L(1212-8) package
design
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