Electronic Components Datasheet Search
Selected language     English  ▼


STN444DN Datasheet(PDF) 2 Page - Stanson Technology

Part No. STN444DN
Description  N Channel Enhancement Mode MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
Logo 

   
 2 page
background image
STN444DN
N Channel Enhancement Mode MOSFET
100A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STN444DN 2016 V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
ID
35
20
A
Pulsed Drain Current
T=300us
IDM
100
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L=0.1mH
IAS
20
A
EAS
20
mJ
Continuous Source Current (Diode Conduction)
IS
35
A
Power Dissipation
TA=25℃
TC=70℃
PD
52
33
W
Operation Junction Temperature
TJ
150
Storgae Temperature Range
TSTG
-55/150
Maximum Junction to Ambient
T ≤ 10s
RθJA
33
/W




Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download




Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl