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STN2610D Datasheet(PDF) 1 Page - Stanson Technology

Part No. STN2610D
Description  N Channel Enhancement Mode MOSFET
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Maker  STANSON [Stanson Technology]
Homepage  http://www.stansontech.com
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STN2610D
N Channel Enhancement Mode MOSFET
50.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright Ā© 2009, Stanson Corp.
STN2610D 2009. V1
DESCRIPTION
STN2610D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
Yļ¼š Year Code
Aļ¼šProcess Code
Bļ¼šProcess Code
FEATURE
l
60V/10.0A, RDS(ON) = 10mĪ© (Typ.)
@VGS = 10V
l
60V/8.0A, RDS(ON) = 12mĪ©
@VGS = 4.5V
l
Super high density cell design for
extremely low RDS(ON)
l
Exceptional on-resistance and
maximum DC current capability
l
TO-252, TO-251 package design




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