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SP8M9 Datasheet(PDF) 2 Page - Rohm |
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SP8M9 Datasheet(HTML) 2 Page - Rohm |
2 / 6 page SP8M9 Transistors 2/5 N-ch Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS Yfs Min. − Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed − 10 µA 30 −− V −− 1 µA 1.0 − 2.5 V − 12 18 − 16 24 m Ω − 17 25 7.0 −− S − 1190 − pF − 340 190 − pF − 10 − pF − 15 − ns − 55 − ns − 22 − ns − 15 − ns − 3.0 21 nC − 6.1 − nC −− nC VGS =20V, VDS=0V VDD 15V ID =1mA, VGS=0V VDS =30V, VGS=0V VDS =10V, ID=1mA ID =9.0A, VGS=10V ID =9.0A, VGS=4.5V ID =9.0A, VGS=4V ID =9.0A, VDS=10V VDS =10V VGS =0V f =1MHz VGS =10V RL =3.33Ω RG =10Ω VGS =5V ID =9.0A ID =4.5A, VDD 15V Body diode characteristics (Source-Drain Characteristics) (Ta=25 °C) VSD −− 1.2 V IS =6.4A, VGS=0V Parameter Symbol Min. Typ. Max. Unit Conditions ∗ Forward voltage ∗Pulsed |
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