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2SA673A Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part No. 2SA673A
Description  TO-92 Plastic-Encapsulate Transistors
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Maker  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/index.asp
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TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA673A
TRANSISTOR (PNP)
FEATURES
Low Frequency Amplifier
Complementary Pair with 2SC1213A
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-0.01mA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.01mA,IC=0
-4
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
-0.5
μA
hFE(1)
VCE=-3V, IC=-10mA
60
320
DC current gain
hFE(2)
*
VCE=-3V, IC=-500mA
10
Collector-emitter saturation voltage
VCE(sat)
*
IC=-150mA,IB=-15mA
-0.6
V
Base-emitter voltage
VBE
VCE=-3V, IC=-10mA
-0.75
V
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
B
C
D
RANGE
60-120
100-200
160-320
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current
-0.5
A
PC
Collector Power Dissipation
400
mW
RθJA
Thermal Resistance From Junction To Ambient
312
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
www.cj-elec.com
1
C,Dec,2015




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